Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions

Shao Ming Nien, Jian Long Ruan, Yang Kuao Kuo, Benjamin Tien Hsi Lee

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Aluminum nitride (AlN) is a ceramic material with excellent dielectric and thermal properties, and it is used in the microelectron and energy fields. Despite polishing, the roughness (rms >10 nm) of AlN wafers fabricated by sintering fails to meet the surface requirements (rms <0.5 nm) for direct wafer bonding. However, rough-surface wafer bonding of paired AlN and AlN can be achieved with the following procedure: (1) rough surfaces are activated by oxygen plasma to introduce strong capillary action, (2) reactions of AlN and bonding species (OH) are promoted by clamping during storage and annealing and (3) low-temperature annealing (<150 °C) joins the two surfaces of AlN/AlN by synthesizing Al2O3 at the bonding interface. TEM and XPS results show that a transition layer exists between bonding surfaces wherein the concentration of nitrogen decreases while that of oxygen significantly increases.

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頁(從 - 到)8766-8772
頁數7
期刊Ceramics International
48
發行號6
DOIs
出版狀態已出版 - 15 3月 2022

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