Low-temperature PECVD silicon-nitride passivation for perovskite solar cell

Tse Lin Lai; Yun Fong Lee; Ya Hui Hsu; Chieh Pu Tsai; Chun Kai Huang; Cheng Yi Liu

doi:10.1016/j.matchemphys.2022.126880

Low-temperature PECVD silicon-nitride passivation for perovskite solar cell

Tse Lin Lai, Yun Fong Lee, Ya Hui Hsu, Chieh Pu Tsai, Chun Kai Huang, Cheng Yi Liu

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Low temperature PECVD Si-nitride was investigated as passivation layer for Ag electrode of perovskite solar cell, which is highly sensitive to H₂O. FTIR analysis verified that, with H₂O in aging ambient, hydrolysis and oxidation reaction occurred on Si-nitride films, which weakened and cracked Si-nitride film. Adding O₂ in aging ambients, surface Si–N bonds could be passivated by adsorbed O and hydrolysis reaction of Si-nitride could be reduced. It is confirmed by FTIR spectrum of aged Si-nitirde films in O₂/N₂/H₂O ambient. With further increasing O₂ partial pressure (over 25% O₂) in O₂/N₂/H₂O ambient, surface-adsorbed O diffused into Si-nitride and accumulated at Si-nitride/Ag interface, which built-up pressure and cracking Si-nitride film. Thus, it is concluded that the pressure built-up from O₂ accumulation and hydrolysis and oxidation reactions of Si-nitride are key factors for the reliability of Si-nitride passivation films.

原文	???core.languages.en_GB???
文章編號	126880
期刊	Materials Chemistry and Physics
卷	294
DOIs	https://doi.org/10.1016/j.matchemphys.2022.126880
出版狀態	已出版 - 15 1月 2023

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10.1016/j.matchemphys.2022.126880

高效能高自由度串疊鈣鈦礦太陽能電池封裝技術(3/3)
Liu, C.-Y. (PI)
1/08/21 → 31/10/22
研究計畫: Research
建構SnAg/銅(鎳)墊層微銲點之溫度-電流密度-Ag添加量電遷移失效地圖研究(3/3)
Liu, C.-Y. (PI)
1/08/20 → 31/07/21
研究計畫: Research

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title = "Low-temperature PECVD silicon-nitride passivation for perovskite solar cell",

abstract = "Low temperature PECVD Si-nitride was investigated as passivation layer for Ag electrode of perovskite solar cell, which is highly sensitive to H2O. FTIR analysis verified that, with H2O in aging ambient, hydrolysis and oxidation reaction occurred on Si-nitride films, which weakened and cracked Si-nitride film. Adding O2 in aging ambients, surface Si–N bonds could be passivated by adsorbed O and hydrolysis reaction of Si-nitride could be reduced. It is confirmed by FTIR spectrum of aged Si-nitirde films in O2/N2/H2O ambient. With further increasing O2 partial pressure (over 25% O2) in O2/N2/H2O ambient, surface-adsorbed O diffused into Si-nitride and accumulated at Si-nitride/Ag interface, which built-up pressure and cracking Si-nitride film. Thus, it is concluded that the pressure built-up from O2 accumulation and hydrolysis and oxidation reactions of Si-nitride are key factors for the reliability of Si-nitride passivation films.",

keywords = "CVD, Perovskite solar cell, Si nitride, Thin film deposition",

author = "Lai, {Tse Lin} and Lee, {Yun Fong} and Hsu, {Ya Hui} and Tsai, {Chieh Pu} and Huang, {Chun Kai} and Liu, {Cheng Yi}",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2023",

month = jan,

day = "15",

doi = "10.1016/j.matchemphys.2022.126880",

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T1 - Low-temperature PECVD silicon-nitride passivation for perovskite solar cell

AU - Lai, Tse Lin

AU - Lee, Yun Fong

AU - Hsu, Ya Hui

AU - Tsai, Chieh Pu

AU - Huang, Chun Kai

AU - Liu, Cheng Yi

PY - 2023/1/15

Y1 - 2023/1/15

N2 - Low temperature PECVD Si-nitride was investigated as passivation layer for Ag electrode of perovskite solar cell, which is highly sensitive to H2O. FTIR analysis verified that, with H2O in aging ambient, hydrolysis and oxidation reaction occurred on Si-nitride films, which weakened and cracked Si-nitride film. Adding O2 in aging ambients, surface Si–N bonds could be passivated by adsorbed O and hydrolysis reaction of Si-nitride could be reduced. It is confirmed by FTIR spectrum of aged Si-nitirde films in O2/N2/H2O ambient. With further increasing O2 partial pressure (over 25% O2) in O2/N2/H2O ambient, surface-adsorbed O diffused into Si-nitride and accumulated at Si-nitride/Ag interface, which built-up pressure and cracking Si-nitride film. Thus, it is concluded that the pressure built-up from O2 accumulation and hydrolysis and oxidation reactions of Si-nitride are key factors for the reliability of Si-nitride passivation films.

AB - Low temperature PECVD Si-nitride was investigated as passivation layer for Ag electrode of perovskite solar cell, which is highly sensitive to H2O. FTIR analysis verified that, with H2O in aging ambient, hydrolysis and oxidation reaction occurred on Si-nitride films, which weakened and cracked Si-nitride film. Adding O2 in aging ambients, surface Si–N bonds could be passivated by adsorbed O and hydrolysis reaction of Si-nitride could be reduced. It is confirmed by FTIR spectrum of aged Si-nitirde films in O2/N2/H2O ambient. With further increasing O2 partial pressure (over 25% O2) in O2/N2/H2O ambient, surface-adsorbed O diffused into Si-nitride and accumulated at Si-nitride/Ag interface, which built-up pressure and cracking Si-nitride film. Thus, it is concluded that the pressure built-up from O2 accumulation and hydrolysis and oxidation reactions of Si-nitride are key factors for the reliability of Si-nitride passivation films.

KW - CVD

KW - Perovskite solar cell

KW - Si nitride

KW - Thin film deposition

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U2 - 10.1016/j.matchemphys.2022.126880

DO - 10.1016/j.matchemphys.2022.126880

M3 - 期刊論文

AN - SCOPUS:85141472145

SN - 0254-0584

VL - 294

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

M1 - 126880

ER -

Low-temperature PECVD silicon-nitride passivation for perovskite solar cell

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高效能高自由度串疊鈣鈦礦太陽能電池封裝技術(3/3)

建構SnAg/銅(鎳)墊層微銲點之溫度-電流密度-Ag添加量電遷移失效地圖研究(3/3)

引用此