摘要
Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O2–Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm−2) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 2259-2263 |
頁數 | 5 |
期刊 | Physica Status Solidi (A) Applications and Materials Science |
卷 | 213 |
發行號 | 8 |
DOIs | |
出版狀態 | 已出版 - 1 8月 2016 |