@article{d140f613b1e4427a8c1e6650c2d9692b,
title = "Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",
abstract = "The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density KSURF than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S0 is deduced for the DHBT with a higher Sb content in the InGaAsSb base.",
keywords = "Heterojunction bipolar transistors (HBTs), InAlAs/InGaAsSb, Type-II B/C junction",
author = "Wang, {Sheng Yu} and Chiang, {Pei Yi} and Chang, {Chao Min} and Chen, {Shu Han} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received September 9, 2010; revised September 17, 2010; accepted September 20, 2010. Date of publication November 1, 2010; date of current version November 24, 2010. This work was supported in part by the Ministry of Economic Affairs under Contract 94-EC-17-A-07-S1-0001 and the National Science Council of Taiwan under Contract NSC 98-2221-E-008-099-MY3. The review of this letter was arranged by Editor J. A. del Alamo.",
year = "2010",
month = dec,
doi = "10.1109/LED.2010.2081342",
language = "???core.languages.en_GB???",
volume = "31",
pages = "1401--1403",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "12",
}