Low stress silicon layer transfer onto quartz through hydrogen capture within Si (B/Ge) Buried Layer

C. H. Huang, C. C. Ho, S. C. Jeng, T. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

An epitaxial single-crystalline Si layer, 715 nm thick, was transferred onto quartz by wafer bonding and diffused-hydrogen ion cutting below 180°C. A sharp interface for trapping hydrogen atoms was created by the epitaxial growth of an undoped silicon layer on top of a boron/germanium-doped silicon layer. An interfacial hydrogen concentration of 1.5× 1022 cm-3 was achieved by exposure to an atmospheric-pressure plasma. Following annealing at 180°C and subsequent mechanically induced crack propagation at room temperature, a smooth (root-mean-square = 1.14 nm), damage-free silicon layer was transferred onto quartz.

原文???core.languages.en_GB???
頁(從 - 到)H423-H425
期刊Electrochemical and Solid-State Letters
12
發行號12
DOIs
出版狀態已出版 - 2009

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