Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions

S. L. Cheng; L. J. Chen; B. Y. Tsui

doi:10.1016/S0254-0584(97)80255-6

Low-resistivity TiSi₂ contacts on nitrogen implanted ultra-shallow junctions

S. L. Cheng, L. J. Chen, B. Y. Tsui

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Effects of nitrogen-ion implantation on TiSi₂ contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF₂⁺-20 keV N₂⁺ and 30 keV As⁺-20 keV N₂⁺ implanted samples, a continuous low-resistivity TiSi₂ layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 10¹⁵ cm^-2 N₂⁺ and As⁺ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N⁺ implantation can be successfully implemented in forming low-resistivity TiSi₂ contacts on shallow junctions in deep submicron devices.

原文	???core.languages.en_GB???
頁（從 - 到）	172-175
頁數	4
期刊	Materials Chemistry and Physics
卷	50
發行號	2
DOIs	https://doi.org/10.1016/S0254-0584(97)80255-6
出版狀態	已出版 - 9月 1997

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10.1016/S0254-0584(97)80255-6

引用此

@article{bfea5e35d7384ba2a33328717cb67b8e,

title = "Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions",

abstract = "Effects of nitrogen-ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF2+-20 keV N2+ and 30 keV As+-20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 1015 cm-2 N2+ and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N+ implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.",

keywords = "Implantations, Junctions, Resistivity, TiS contacts",

author = "Cheng, \{S. L.\} and Chen, \{L. J.\} and Tsui, \{B. Y.\}",

note = "Funding Information: The research was supported by the National Council through Grant No. NSC8.5-2215-E007-019 Electronics Research and Service Organization.",

year = "1997",

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TY - JOUR

T1 - Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions

AU - Cheng, S. L.

AU - Chen, L. J.

AU - Tsui, B. Y.

N1 - Funding Information: The research was supported by the National Council through Grant No. NSC8.5-2215-E007-019 Electronics Research and Service Organization.

PY - 1997/9

Y1 - 1997/9

N2 - Effects of nitrogen-ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF2+-20 keV N2+ and 30 keV As+-20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 1015 cm-2 N2+ and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N+ implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.

AB - Effects of nitrogen-ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF2+-20 keV N2+ and 30 keV As+-20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 1015 cm-2 N2+ and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N+ implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.

KW - Implantations

KW - Junctions

KW - Resistivity

KW - TiS contacts

UR - https://www.scopus.com/pages/publications/0031234668

U2 - 10.1016/S0254-0584(97)80255-6

DO - 10.1016/S0254-0584(97)80255-6

M3 - 期刊論文

AN - SCOPUS:0031234668

SN - 0254-0584

VL - 50

SP - 172

EP - 175

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions

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Low-resistivity TiSi₂ contacts on nitrogen implanted ultra-shallow junctions