摘要
Effects of nitrogen-ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen-ion implantation was found to suppress the boron and arsenic diffusion. For Ti on 30 keV BF2+-20 keV N2+ and 30 keV As+-20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 1015 cm-2 N2+ and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that, with appropriate control, N+ implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.
原文 | ???core.languages.en_GB??? |
---|---|
頁(從 - 到) | 172-175 |
頁數 | 4 |
期刊 | Materials Chemistry and Physics |
卷 | 50 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 9月 1997 |