摘要
In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 216-220 |
頁數 | 5 |
期刊 | Journal of Crystal Growth |
卷 | 425 |
DOIs | |
出版狀態 | 已出版 - 28 7月 2015 |