Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices

J. I. Chyi, J. Chen, N. S. Kumar, C. Kiely, C. K. Peng, A. Rockett, H. Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10-7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.

原文???core.languages.en_GB???
頁(從 - 到)570-571
頁數2
期刊Applied Physics Letters
55
發行號6
DOIs
出版狀態已出版 - 1989

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