Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunnelling contact layer

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, G. C. Chi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

134 引文 斯高帕斯（Scopus）

指紋

深入研究「Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunnelling contact layer」主題。共同形成了獨特的指紋。

Keyphrases

Engineering

Material Science

Chemical Engineering