Keyphrases
Indium Gallium Nitride (InGaN)
100%
GaN-based Light-emitting Diodes
100%
Contact Layer
100%
Si-doped
100%
Low-voltage Operation
100%
Tunneling Contact
100%
Short-period Superlattice
100%
Light-emitting Diodes
33%
Low Resistivity
33%
Ohmic Contact
33%
Electron Concentration
33%
Tunnel Junction
33%
N-GaN
16%
Diode Structures
16%
Multiple Quantum Wells
16%
P-GaN
16%
Metal Organic Vapor Phase Epitaxy (MOVPE)
16%
High Resistivity
16%
Au-Ni
16%
Operation Voltage
16%
High Conductivity
16%
Top Contact
16%
Reverse-biased
16%
Engineering
Light-Emitting Diode
100%
Tunnel Construction
100%
Superlattice
100%
Ohmic Contacts
33%
Electron Concentration
33%
Experimental Result
16%
Quantum Well
16%
Material Science
Light-Emitting Diode
100%
Superlattice
100%
Electrical Resistivity
50%
Quantum Well
16%
Vapor Phase Epitaxy
16%
Chemical Engineering
Metallorganic Chemical Vapor Deposition
100%