LOW-leakage INAS/ALSB hemt with high FT-LG product

Yu Chao Lin, Ta Wei Fan, Heng Kuang Lin, Pei Chin Chiu, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials by solid-sourcemolecular beam epitaxy. Improved device performance is observed.

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主出版物標題IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
頁面330-333
頁數4
DOIs
出版狀態已出版 - 2009
事件IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
持續時間: 10 5月 200914 5月 2009

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

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???event.eventtypes.event.conference???IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
國家/地區United States
城市Newport Beach, CA
期間10/05/0914/05/09

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