Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Engineering

• Frequency Noise 100%
• Noise Characterization 100%
• Noise Power Spectral Density 100%
• Activation Energy 50%
• Si Substrate 50%
• Buffer Layer 50%
• Linear Region 50%
• Flicker Noise 50%
• Transistor 50%

Physics

• Power Spectral Density 100%
• High Electron Mobility Transistors 50%
• Activation Energy 50%

Keyphrases

• Charge Trapping/detrapping 33%