Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

I. Lin, L. W. Ting

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy "rf hollow oval magnetron" system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.

原文???core.languages.en_GB???
頁(從 - 到)2030-2032
頁數3
期刊Applied Physics Letters
53
發行號21
DOIs
出版狀態已出版 - 1988

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