Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

I. Lin; L. W. Ting

doi:10.1063/1.100493

Low-energy ion-enhanced deposition of SiO₂ in rf magnetron plasmas

I. Lin, L. W. Ting

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

A novel low-temperature (<50°C) deposition process of a thin SiO₂ film in a low-energy "rf hollow oval magnetron" system was studied. O₂ is directly mixed with SiH₄ and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (10¹¹ cm^-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO₂), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH₄ /O₂ flow rates and their ratio.

原文	???core.languages.en_GB???
頁（從 - 到）	2030-2032
頁數	3
期刊	Applied Physics Letters
卷	53
發行號	21
DOIs	https://doi.org/10.1063/1.100493
出版狀態	已出版 - 1988

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10.1063/1.100493

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@article{e69d9ae4bf0e4855894b00f5acdcf33e,

title = "Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas",

abstract = "A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy {"}rf hollow oval magnetron{"} system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 {\AA}/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.",

author = "I. Lin and Ting, {L. W.}",

year = "1988",

doi = "10.1063/1.100493",

language = "???core.languages.en_GB???",

volume = "53",

pages = "2030--2032",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "21",

}

TY - JOUR

T1 - Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

AU - Lin, I.

AU - Ting, L. W.

PY - 1988

Y1 - 1988

N2 - A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy "rf hollow oval magnetron" system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.

AB - A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy "rf hollow oval magnetron" system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.

UR - http://www.scopus.com/inward/record.url?scp=51149206865&partnerID=8YFLogxK

U2 - 10.1063/1.100493

DO - 10.1063/1.100493

M3 - 期刊論文

AN - SCOPUS:51149206865

SN - 0003-6951

VL - 53

SP - 2030

EP - 2032

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

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Low-energy ion-enhanced deposition of SiO₂ in rf magnetron plasmas