Low-energy high flux reactive ion etching by rf magnetron plasma

I. Lin, D. C. Hinson, W. H. Class, R. L. Sandstrom

研究成果: 雜誌貢獻期刊論文同行評審

41 引文 斯高帕斯(Scopus)

摘要

The magnetron plasma etching of SiO2 and Si in fluorocarbon gas has been investigated. The plasma has high ionization degree, collisionless high density, and low energy ion flux (I∼1.0 mA/cm2, 30≲E i ≲250 eV at 1 W/cm2) and a controllable etch uniformity. The bulk of the plasma supports an electric field which can be shaped to achieve normal ion bombardment of the etching surface. Good etching anisotropy, high SiO2/Si selectivity, and rates six times greater than conventional reactive ion etching were demonstrated.

原文???core.languages.en_GB???
頁(從 - 到)185-187
頁數3
期刊Applied Physics Letters
44
發行號2
DOIs
出版狀態已出版 - 1984

指紋

深入研究「Low-energy high flux reactive ion etching by rf magnetron plasma」主題。共同形成了獨特的指紋。

引用此