Low current-blocking InGaAs/InP DHBT grown by solid-source MBE

Shu Han Chen, Meng Lin Lee, Ming Yuan Tseng, Wei Sheng Liu, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Double heterojunction bipolar transistor (DHBT) of InP and related materials is getting more attention due to its potential applications in 40 Gbps optical communications and low voltage radio frequency integration circuits. For these applications, the DHBT has to have low offset voltage, high breakdown voltage while with low current blocking effect. In this work, we have demonstrated that InGaAs/InP DHBT satisfying the aforementioned characteristics can be obtained by using InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. Since the epilayers are grown by solid source molecular beam epitaxy, the Be-doped base layer is of high carrier concentration, which is shown to be effective in reducing the current blocking effect.

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主出版物標題MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
發行者Institute of Electrical and Electronics Engineers Inc.
頁面95-96
頁數2
ISBN(電子)0780375815, 9780780375819
DOIs
出版狀態已出版 - 2002
事件12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
持續時間: 15 9月 200220 9月 2002

出版系列

名字MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

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???event.eventtypes.event.conference???12th International Conference on Molecular Beam Epitaxy, MBE 2002
國家/地區United States
城市San Francisco
期間15/09/0220/09/02

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