@inproceedings{747700f621a54298aea784c319758172,
title = "Linearity of algan/gan hemts with different gate-to-source length",
abstract = "In this paper, the performance of AlGaN/GaN HEMTs with different gate-to-source length (LGS) and with a fixed distance of drain-to-source (LDS) is presented. The increase in LGS makes the source resistance (RS) increase. In general, the larger the resistance, the better the linearity and stability in the power amplifier, thereby these devices were used to study and compare the device characteristics. According to output 3rd order intercept (OIP3), there is no linear trend in the linearity with related to the LGS and RS. The optimal layout for the different geometry in this study is the device with gate width of 250 μm and LGS of 1.325 μm.",
keywords = "Gan, Gate-to-source length, Linearity",
author = "Zhong, {Yi Nan} and Hsin, {Yue Ming}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 ; Conference date: 23-05-2019 Through 25-05-2019",
year = "2019",
month = may,
doi = "10.1109/WiPDAAsia.2019.8760307",
language = "???core.languages.en_GB???",
series = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
}