Linearity of algan/gan hemts with different gate-to-source length

Yi Nan Zhong, Yue Ming Hsin

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

In this paper, the performance of AlGaN/GaN HEMTs with different gate-to-source length (LGS) and with a fixed distance of drain-to-source (LDS) is presented. The increase in LGS makes the source resistance (RS) increase. In general, the larger the resistance, the better the linearity and stability in the power amplifier, thereby these devices were used to study and compare the device characteristics. According to output 3rd order intercept (OIP3), there is no linear trend in the linearity with related to the LGS and RS. The optimal layout for the different geometry in this study is the device with gate width of 250 μm and LGS of 1.325 μm.

原文???core.languages.en_GB???
主出版物標題WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728121451
DOIs
出版狀態已出版 - 5月 2019
事件2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan
持續時間: 23 5月 201925 5月 2019

出版系列

名字WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

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???event.eventtypes.event.conference???2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
國家/地區Taiwan
城市Taipei
期間23/05/1925/05/19

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