Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates

Chang Chi Pan, Chi Hsun Hsieh, Chih Wei Lin, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

36 引文 斯高帕斯(Scopus)

摘要

GaN-based epilayers are grown on wet-etched stripe-patterned sapphire substrates, with stripes along the 〈11-20〉sapphire and 〈1-100〉sapphire directions, for 400 nm ultraviolet light-emitting diodes (LEDs). The effects of the etching depth and stripe orientation on the structural and optical properties of the GaN layer as well as on the LEDs are investigated. Much better material quality and light output power are obtained when the GaN and the LEDs are grown on a 0.9 μm deep patterned sapphire substrate with stripes along the 〈1-100〉sapphire direction. Stripe-orientation dependent growth modes accounting for the observed experimental results are proposed.

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文章編號084503
期刊Journal of Applied Physics
102
發行號8
DOIs
出版狀態已出版 - 2007

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