摘要
GaN-based epilayers are grown on wet-etched stripe-patterned sapphire substrates, with stripes along the 〈11-20〉sapphire and 〈1-100〉sapphire directions, for 400 nm ultraviolet light-emitting diodes (LEDs). The effects of the etching depth and stripe orientation on the structural and optical properties of the GaN layer as well as on the LEDs are investigated. Much better material quality and light output power are obtained when the GaN and the LEDs are grown on a 0.9 μm deep patterned sapphire substrate with stripes along the 〈1-100〉sapphire direction. Stripe-orientation dependent growth modes accounting for the observed experimental results are proposed.
原文 | ???core.languages.en_GB??? |
---|---|
文章編號 | 084503 |
期刊 | Journal of Applied Physics |
卷 | 102 |
發行號 | 8 |
DOIs | |
出版狀態 | 已出版 - 2007 |