TY - JOUR
T1 - Light output enhancement of InGaN light-emitting diodes grown on Masklessly etched sapphire substrates
AU - Lin, Hung Cheng
AU - Lin, Ruo Syuan
AU - Chyi, Jen Inn
AU - Lee, Chia Ming
N1 - Funding Information:
Manuscript received April 29, 2008; revised June 17, 2008. Current version published September 10, 2008. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract NSC 95-2221-E-008-153. H.-C. Lin and R.-S. Lin are with the Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan, R.O.C. J.-I. Chyi is with the Department of Electrical Engineering and Department of Optics and Photonics, National Central University, Jhongli 32001, Taiwan, R.O.C. and also with the Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan, R.O.C. (e-mail: [email protected]). C.-M. Lee is with Tekcore Company, Ltd., Nantou 54065, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2008.2002736 Fig. 1. Nomarski optical images of a wet-etched sapphire sample after: (a) etching in sulfuric acid (96%) at 275 C for 5 min, and (b) etching in a phosphoric acid (86%)-based solution at 275 C for 2 min. (c) Facets that identified by atomic force microscopy. The insets of (a) and (b) are the SEM images of the sapphire surface, respectively.
PY - 2008
Y1 - 2008
N2 - A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.
AB - A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.
KW - GaN
KW - InGaN
KW - Light-emitting diodes (LEDs)
KW - Patterned sapphire
UR - http://www.scopus.com/inward/record.url?scp=52149099492&partnerID=8YFLogxK
U2 - 10.1109/LPT.2008.2002736
DO - 10.1109/LPT.2008.2002736
M3 - 期刊論文
AN - SCOPUS:52149099492
SN - 1041-1135
VL - 20
SP - 1621
EP - 1623
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 19
ER -