Light output enhancement of InGaN light-emitting diodes grown on Masklessly etched sapphire substrates

Hung Cheng Lin, Ruo Syuan Lin, Jen Inn Chyi, Chia Ming Lee

研究成果: 雜誌貢獻期刊論文同行評審

30 引文 斯高帕斯(Scopus)

摘要

A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.

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頁(從 - 到)1621-1623
頁數3
期刊IEEE Photonics Technology Letters
20
發行號19
DOIs
出版狀態已出版 - 2008

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