@article{62d0eaec66d94155ab0abac6ac2643e4,
title = "Light-extraction enhancement by cavity array-textured n-polar GaN surfaces ablated using a KrF laser",
abstract = "The creation of KOH-etched pyramidal patterns on the N-GaN surface is considered to be the most effective texturing method for improving the light-extraction efficiency of GaN LEDs. Using KrF-laser ablation, concave downward cavities are formed on the N-GaN surface. This letter demonstrates that KrF-laser-ablated cavities enhance the light-extraction efficiency of the KOH-etched pyramidal N-GaN surface by 25%. With further etching by KOH, the curved-surface sidewall of laser-ablated cavities do not form pyramids; instead, relatively large inclined facet sidewalls are formed in the laser-ablated cavities. We believe that these inclined facet sidewalls in laser-ablated cavities further enhance the light-extraction efficiency of KOH-etched pyramidal N-GaN surfaces.",
keywords = "KrF excimer laser, laser lift-off, light emitting diode, light extraction, wet etching",
author = "Chang, {You Hsien} and Lin, {Yi Chin} and Liu, {Yen Shuo} and Liu, {Cheng Yi}",
note = "Funding Information: Manuscript received June 17, 2012; revised September 4, 2012; accepted September 4, 2012. Date of publication September 7, 2012; date of current version October 31, 2012. This work was supported in part by the National Central University{\textquoteright}s Plan to develop first-class universities, a top-level research centers{\textquoteright} grant (100G903-2), and grants from the National Science Council (NSC 98-2221-E-008-027-MY3 and NSC 101-3113-E-008-001).",
year = "2012",
doi = "10.1109/LPT.2012.2217948",
language = "???core.languages.en_GB???",
volume = "24",
pages = "2013--2015",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
number = "22",
}