Light-emitting diodes with nickel substrates fabricated by electroplating

P. H. Chang; N. C. Chen; Y. N. Wang; C. F. Shih; M. H. Wu; T. H. Yang; Y. H. Tzou; S. J. Wang

doi:10.1116/1.2110280

Light-emitting diodes with nickel substrates fabricated by electroplating

P. H. Chang, N. C. Chen, Y. N. Wang, C. F. Shih, M. H. Wu, T. H. Yang, Y. H. Tzou, S. J. Wang

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.

原文	???core.languages.en_GB???
頁（從 - 到）	L22-L24
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	23
發行號	6
DOIs	https://doi.org/10.1116/1.2110280
出版狀態	已出版 - 11月 2005

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10.1116/1.2110280

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title = "Light-emitting diodes with nickel substrates fabricated by electroplating",

abstract = "AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.",

author = "Chang, {P. H.} and Chen, {N. C.} and Wang, {Y. N.} and Shih, {C. F.} and Wu, {M. H.} and Yang, {T. H.} and Tzou, {Y. H.} and Wang, {S. J.}",

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TY - JOUR

T1 - Light-emitting diodes with nickel substrates fabricated by electroplating

AU - Chang, P. H.

AU - Chen, N. C.

AU - Wang, Y. N.

AU - Shih, C. F.

AU - Wu, M. H.

AU - Yang, T. H.

AU - Tzou, Y. H.

AU - Wang, S. J.

PY - 2005/11

Y1 - 2005/11

N2 - AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.

AB - AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.

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DO - 10.1116/1.2110280

M3 - 期刊論文

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SN - 1071-1023

VL - 23

SP - L22-L24

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Light-emitting diodes with nickel substrates fabricated by electroplating

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