摘要
Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | G137-G139 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 8 |
發行號 | 6 |
DOIs | |
出版狀態 | 已出版 - 2005 |