Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation

Y. Y. Yang, C. H. Huang, Y. K. Hsu, S. J. Jeng, C. C. Tai, S. Lee, H. W. Chen, Q. Gan, C. S. Chu, J. H. Ting, C. S. Lai, T. H. Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

"Thermal-microwave co-activation process" is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8" transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.

原文???core.languages.en_GB???
主出版物標題Transistor Scaling-Methods, Materials and Modeling
發行者Materials Research Society
頁面111-116
頁數6
ISBN(列印)1558998691, 9781558998698
DOIs
出版狀態已出版 - 2006
事件2006 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 17 4月 200621 4月 2006

出版系列

名字Materials Research Society Symposium Proceedings
913
ISSN(列印)0272-9172

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???event.eventtypes.event.conference???2006 MRS Spring Meeting
國家/地區United States
城市San Francisco, CA
期間17/04/0621/04/06

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