Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

Q. Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, T. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

209 引文 斯高帕斯(Scopus)

摘要

Si, Ge, SiC, and diamond samples were implanted with H2+ at 120-160 keV with 5.0 × 1016 ions/cm2 (corresponding to l.0× 1017 H+ ions/cm2) and annealed at various temperatures to introduce hydrogen filled microcracks. An effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures. The measured effective activation energies are close to the respective bond energies in all four materials. The time required to completely split hydrogen implanted layers from bonded silicon substrates and to transfer them onto oxidized silicon wafers is a factor of about 10 longer. Both processes, blister formation and layer splitting, show the same activation energy.

原文???core.languages.en_GB???
頁(從 - 到)1390-1392
頁數3
期刊Applied Physics Letters
70
發行號11
DOIs
出版狀態已出版 - 17 3月 1997

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