Lattice-matched In0.29Al0.71As/In0.3Ga0.7As doped-channel FETs

Ming Ta Yang; Yi Jen Chan; Jia Lin Shieh; Jen Inn Chyi

Lattice-matched In_0.29Al_0.71As/In_0.3Ga_0.7As doped-channel FETs

Ming Ta Yang, Yi Jen Chan, Jia Lin Shieh, Jen Inn Chyi

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Lattice-matched and dislocation-free In_0.29Al_0.71As/In_0.3Ga_0.7As heterostructures with an improved Schottky barrier height have been realized on GaAs substrates. Through the temperature-dependent Hall effect as well as TEM analysis, the effectiveness of dislocation filtering have been verified. Based on the doped-channel approach, high current capability and high device performance were demonstrated for metamorphic doped-channel field effect transistors.

原文	???core.languages.en_GB???
頁（從 - 到）	408-411
頁數	4
期刊	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態	已出版 - 1995
事件	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn 持續時間: 9 5月 1995 → 13 5月 1995

引用此

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title = "Lattice-matched In0.29Al0.71As/In0.3Ga0.7As doped-channel FETs",

abstract = "Lattice-matched and dislocation-free In0.29Al0.71As/In0.3Ga0.7As heterostructures with an improved Schottky barrier height have been realized on GaAs substrates. Through the temperature-dependent Hall effect as well as TEM analysis, the effectiveness of dislocation filtering have been verified. Based on the doped-channel approach, high current capability and high device performance were demonstrated for metamorphic doped-channel field effect transistors.",

author = "Yang, {Ming Ta} and Chan, {Yi Jen} and Shieh, {Jia Lin} and Chyi, {Jen Inn}",

year = "1995",

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pages = "408--411",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials ; Conference date: 09-05-1995 Through 13-05-1995",

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TY - JOUR

T1 - Lattice-matched In0.29Al0.71As/In0.3Ga0.7As doped-channel FETs

AU - Yang, Ming Ta

AU - Chan, Yi Jen

AU - Shieh, Jia Lin

AU - Chyi, Jen Inn

PY - 1995

Y1 - 1995

N2 - Lattice-matched and dislocation-free In0.29Al0.71As/In0.3Ga0.7As heterostructures with an improved Schottky barrier height have been realized on GaAs substrates. Through the temperature-dependent Hall effect as well as TEM analysis, the effectiveness of dislocation filtering have been verified. Based on the doped-channel approach, high current capability and high device performance were demonstrated for metamorphic doped-channel field effect transistors.

AB - Lattice-matched and dislocation-free In0.29Al0.71As/In0.3Ga0.7As heterostructures with an improved Schottky barrier height have been realized on GaAs substrates. Through the temperature-dependent Hall effect as well as TEM analysis, the effectiveness of dislocation filtering have been verified. Based on the doped-channel approach, high current capability and high device performance were demonstrated for metamorphic doped-channel field effect transistors.

UR - http://www.scopus.com/inward/record.url?scp=0029236239&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0029236239

SN - 1092-8669

SP - 408

EP - 411

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials

Y2 - 9 May 1995 through 13 May 1995

ER -

Lattice-matched In0.29Al0.71As/In0.3Ga0.7As doped-channel FETs

摘要

指紋

引用此

Lattice-matched In_0.29Al_0.71As/In_0.3Ga_0.7As doped-channel FETs