Lateral self-aligned p-type in ₂O ₃ nanowire arrays epitaxially grown on Si substrates

Lateral orientated growth of In ₂O ₃ nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In ₂O ₃ NWs and NRs were grown along [21̄1̄] in parallel to the Si ±[11̄0] and lying in the substrate plane. The electrical measurements show that the In ₂O ₃ NWs are p-type semiconductor. By N ⁺ doping, the resistivity of the In ₂O ₃ NWs has been tuned. The lateral self-aligned In ₂O ₃ NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.