摘要
Magnesium-doped p-type GaN has been activated by irradiation with photons of 532 nm wavelength from the second harmonic of a Q-switched neodymium-doped ytterbium aluminum garnet (Nd:YAG) laser. With appropriate laser fluence levels and irradiation pulse numbers, such a laser-induced activation process resulted in a hole concentration about the same as that obtained through the conventional thermal activation technique. Temperature measurement revealed that the laser-induced process is very unlikely to be thermal. It was speculated that the process might involve the photon-induced breaking of the H-Mg bonds.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 2143-2145 |
頁數 | 3 |
期刊 | Japanese Journal of Applied Physics |
卷 | 40 |
發行號 | 4 A |
DOIs | |
出版狀態 | 已出版 - 4月 2001 |