Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system

M. T. Hung, C. C. Wang, J. C. Hsu, J. Y. Chiou, S. W. Lee, T. M. Hsu, P. W. Li

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Thermal conductivity (k(T)) of Ge quantum dots (QDs) embedded in SiO 2 was investigated at T = 100-400 K. The Ge QD/SiO2 system appears to have much lower k(T) than their counterparts of bulk Ge and SiO 2, and the reduction factor increases with the surface-to-volume ratio of the QD in SiO2. Attendant to reduced magnitude includes delayed Umklapp decline and weaker dependence on temperature for k(T). Effective medium analysis suggests the reduction in k primarily comes from the decreased group velocity thanks to the QD inclusion that induces interfacial stress on SiO2, phonon confinement, and boundary scatterings.

原文???core.languages.en_GB???
文章編號251913
期刊Applied Physics Letters
101
發行號25
DOIs
出版狀態已出版 - 17 12月 2012

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