Large-area few-layer MoS₂ deposited by sputtering

Keyphrases

• 2D Layered Materials 50%
• Annealing Ambience 50%
• Few-layer MoS2 100%
• Field-effect Transistors 50%
• Film Quality 50%
• Gate Field Effect 50%
• Grain Boundary 50%
• High Crystallinity 50%
• Layered MoS2 100%
• Low Mobility 50%
• Magnetron Sputtering 100%
• On-off Ratio 50%
• Photoluminescence 50%
• Post-deposition Annealing 50%
• Small Grain Size 50%
• Sputtering Temperature 50%
• Top Gate 50%
• Transition Metal Dichalcogenides 50%
• Transmission Electron Microscopy Analysis 50%
• Trapped Charge Density 50%

Material Science

• Annealing 100%
• Density 50%
• Electron Microscopy 50%
• Field Effect Transistor 50%
• Film 50%
• Grain Boundary 50%
• Grain Size 50%
• Layered Material 50%
• Magnetron Sputtering 100%
• Photoluminescence 50%
• Transition Metal Dichalcogenide 50%
• Transmission Electron Microscopy 50%