K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

Hsien Chin Chiu, Shih Cheng Yang, Cheng Kuo Lin, Ming Jyh Hwu, H. K. Chiou, Yi Jen Chan

研究成果: 雜誌貢獻通訊期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuits, and a Z0 = 50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan δ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S21 of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.

原文???core.languages.en_GB???
頁(從 - 到)253-255
頁數3
期刊IEEE Electron Device Letters
25
發行號5
DOIs
出版狀態已出版 - 5月 2004

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