@article{06d30af8c3c44671bbaa998e1e85ac1c,
title = "K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology",
abstract = "A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-κ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuits, and a Z0 = 50 Ω line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan δ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S21 of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.",
keywords = "Benzocyclobutene (BCB) interlayer, Coplanar waveguide (CPW), Doped channel HFET (DCFET), K-band monolithic microwave integrated circuit (MMIC)",
author = "Chiu, {Hsien Chin} and Yang, {Shih Cheng} and Lin, {Cheng Kuo} and Hwu, {Ming Jyh} and Chiou, {H. K.} and Chan, {Yi Jen}",
note = "Funding Information: Manuscript received January 13, 2004; revised February 27, 2004. This work was supported in part by the National Science Council of Taiwan, R.O.C. under Grant NSC90-2219-E-008-003 and in part by the University Scholarship Excellent Project, Ministry of Education, Taiwan, R.O.C. under Grant 89-E-FA06-1-4. The review of this letter was arranged by Editor T. Mizutani.",
year = "2004",
month = may,
doi = "10.1109/LED.2004.827282",
language = "???core.languages.en_GB???",
volume = "25",
pages = "253--255",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "5",
}