Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements

Stressed C-V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high-voltage off-state stress. The C-V measurement results also correlated with the degradation in dynamic on-resistance (R_DS,on) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic R_DS,on degradation, the location with high electric field that determines the major degradation is determined. Finally, a new source field plate is proposed and demonstrated to improve the dynamic performance degradation.