Investigations and improvements of AlInN/GaN HEMTs grown on Si

Keyphrases

• GaN HEMT 100%
• AlInN 100%
• High Performance 20%
• AlGaN-GaN 20%
• High Electron Mobility Transistor 20%
• Field-effect Transistors 20%
• Electron Mobility 20%
• Low-frequency Noise 20%
• GaN Heterostructure 20%
• Noise Component 20%
• Low Sheet Resistance 20%
• Transistor Device 20%
• Performance Fields 20%
• Electrical Characteristics 20%
• Noise Generation Mechanism 20%
• High Electron Mobility 20%
• Switching Devices 20%
• Si(111) Substrate 20%
• Spacer Layer 20%
• AlN Spacer 20%
• Noise Behavior 20%
• Carrier number Fluctuations 20%
• Generation-recombination Noise 20%
• Metal-insulator-semiconductor 20%
• Carrier Scattering Mechanism 20%

Engineering

• Heterojunctions 100%
• Frequency Noise 100%
• Field-Effect Transistor 100%
• Sheet Resistance 100%

Material Science

• Transistor 100%
• Electron Mobility 100%
• Aluminum Nitride 83%
• Field Effect Transistor 16%
• Heterojunction 16%
• Electrical Property 16%
• Switch 16%