@inproceedings{397949ff3bcb4a73b9bfceca7b5c30a1,
title = "Investigations and improvements of AlInN/GaN HEMTs grown on Si",
abstract = "This paper reports our continuous efforts and achievements in understanding and improving AlInN/AlN/GaN heterostructure for high performance field-effect transistors and switching devices. AlInN/AlN/GaN high electron mobility transistors (HEMTs) with high electron mobility and low sheet resistance have been demonstrated on 6{"} Si(111) substrates. It is found that electron mobility of AlInN/AlN/GaN HEMTs is closely related to the presence and quality of the AlN spacer layer, which determines the dominant carrier scattering mechanism. A comparative study on the electrical characteristics of AlInN/AlN/GaN and AlGaN/GaN metal-insulator-semiconductor (MIS)-HEMTs shows that both devices exhibit similar low-frequency noise behavior and no obvious generation-recombination (g-r) noise component, implying carrier number fluctuation is the dominant noise mechanism in both structures.",
author = "Chyi, {Jen Inn} and Hsin, {Yue Ming} and Lee, {Geng Yen} and Chiu, {Hsien Chin}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06601.0217ecst",
language = "???core.languages.en_GB???",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "217--222",
editor = "S. Jang and K. Shenai and Hunter, {G. W.} and F. Ren and C. O'Dwyer and Mishra, {K. C.}",
booktitle = "Wide Bandgap Semiconductor Materials and Devices 16",
edition = "1",
}