摘要
Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si 1-zGez)2 was actually blocked by the presence of Ge in Fe(Si1-zGez).
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 203-208 |
頁數 | 6 |
期刊 | Journal of Crystal Growth |
卷 | 281 |
發行號 | 2-4 |
DOIs | |
出版狀態 | 已出版 - 1 8月 2005 |