Investigation of solid reaction between Fe and Si0.8Ge 0.2

Y. L. Chueh, S. L. Cheng, L. J. Chou

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si 1-zGez)2 was actually blocked by the presence of Ge in Fe(Si1-zGez).

原文???core.languages.en_GB???
頁(從 - 到)203-208
頁數6
期刊Journal of Crystal Growth
281
發行號2-4
DOIs
出版狀態已出版 - 1 8月 2005

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