Investigation of intrinsic hydrogenated amorphous silicon (a-Si:H) thin films on textured silicon substrate with high quality passivation

Min Lun Yu, Yu Lin Hsieh, Sheng Kai Jou, Tomi T. Li, Chien Chieh Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

In this study, the intrinsic hydrogenated amorphous silicon (a-Si:H) thin films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) was investigated for the application of the heterojunction silicon solar cell on the textured silicon substrate. During the process, we used the optical emission spectrometer (OES) and quadrupole mass spectrometry (QMS) to analyze the concentrations of free radicals in plasma. The results showed that the better surface recombination velocity (SRV) and passivation quality of a-Si:H thin films on the textured silicon substrate were obtained when the electrode distance at PECVD was 35mm. Furthermore, while the electrode distance was 35mm, the lowest electron temperature and the same spectrum ratio trend in OES (Si∗/SiH∗) and QMS (SiH2/SiH3) respectively were received.

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主出版物標題China Semiconductor Technology International Conference 2017, CSTIC 2017
編輯Steve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509066940
DOIs
出版狀態已出版 - 4 5月 2017
事件2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
持續時間: 12 3月 201713 3月 2017

出版系列

名字China Semiconductor Technology International Conference 2017, CSTIC 2017

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???event.eventtypes.event.conference???2017 China Semiconductor Technology International Conference, CSTIC 2017
國家/地區China
城市Shanghai
期間12/03/1713/03/17

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