The low frequency noise and reverse recovery time characteristics of 6 inch InAlN/AlN/GaN Schottky barrier diode (SBD) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN SBD on SOI achieves a flat surface and an abrupt hetero interface. Based on the DC and low frequency noise (LFN) measurement at various temperatures ranging between 300 and 450 K, the InAlN/GaN SBD on SOI design shows better forward current and reverse current, and the InAlN/GaN SBD on SOI design achieved a lower reverse recovery charge.
|出版狀態||已出版 - 2016|
|事件||31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States|
持續時間: 16 5月 2016 → 19 5月 2016
|???event.eventtypes.event.conference???||31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016|
|期間||16/05/16 → 19/05/16|