Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

S. Y. Wang, C. A. Chang, C. M. Chang, S. H. Chen, F. Ren, S. J. Pearton, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The emitter size effect of a series InGaAsSb base series of InP/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) with different emitter sizes is investigated. Compared to the InGaAs base HBTs, these devices exhibit much lower base surface recombination current. This is attributed to the surface Fermi level pinning near the valence band of the antimonide base. The effect of Sb composition and doping concentration of the base on the surface recombination current is well explained by the postulate.

原文???core.languages.en_GB???
文章編號073507
期刊Applied Physics Letters
101
發行號7
DOIs
出版狀態已出版 - 13 8月 2012

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