Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

Shih Cheng Chang; Yi Shan Lee

doi:10.23919/PS.2019.8817680

Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

Shih Cheng Chang, Yi Shan Lee

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.

原文	???core.languages.en_GB???
主出版物標題	OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9784885523212
DOIs	https://doi.org/10.23919/PS.2019.8817680
出版狀態	已出版 - 7月 2019
事件	24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019 - Fukuoka, Japan 持續時間: 7 7月 2019 → 11 7月 2019

出版系列

名字	OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019
國家/地區	Japan
城市	Fukuoka
期間	7/07/19 → 11/07/19

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10.23919/PS.2019.8817680

砷化鎵銦/砷化鋁銦單光子雪崩真測器開發與應用(2/3)
Lee, Y.-S. (PI)
1/08/18 → 31/07/19
研究計畫: Research

引用此

Chang, S. C., & Lee, Y. S. (2019). Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. 於 OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 文章 8817680 (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/PS.2019.8817680

Chang, Shih Cheng ; Lee, Yi Shan. / Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019).

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abstract = "We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.",

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author = "Chang, {Shih Cheng} and Lee, {Yi Shan}",

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Chang, SC & Lee, YS 2019, Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. 於 OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019., 8817680, OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019, Institute of Electrical and Electronics Engineers Inc., 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019, Fukuoka, Japan, 7/07/19. https://doi.org/10.23919/PS.2019.8817680

Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. / Chang, Shih Cheng; Lee, Yi Shan.
OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8817680 (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

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AU - Chang, Shih Cheng

AU - Lee, Yi Shan

PY - 2019/7

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N2 - We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.

AB - We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.

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M3 - 會議論文篇章

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BT - OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019

Y2 - 7 July 2019 through 11 July 2019

ER -

Chang SC, Lee YS. Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. 於 OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8817680. (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019). doi: 10.23919/PS.2019.8817680

Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

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砷化鎵銦/砷化鋁銦單光子雪崩真測器開發與應用(2/3)

引用此