@inproceedings{92210180889b4b2cb7a24368434ccf18,
title = "Investigation of a-SiOx:H films as passivation layer in heterojunction interface",
abstract = "In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated. In addition, this material will be applied to amorphous silicon / crystalline silicon heterojunction solar cells and improved the open-circuit voltage of solar cells.",
author = "Yeh, {Che Hung} and Chu, {Yen Ho} and Lee, {Chien Chieh} and Hsieh, {Yu Lin} and Liu, {Shian Ming} and Chang, {Jenq Yang} and Chen, {I. Chen} and Li, {Tomi T.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 China Semiconductor Technology International Conference, CSTIC 2015 ; Conference date: 15-03-2015 Through 16-03-2015",
year = "2015",
month = jul,
day = "8",
doi = "10.1109/CSTIC.2015.7153397",
language = "???core.languages.en_GB???",
series = "China Semiconductor Technology International Conference 2015, CSTIC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Cor Claeys and Qinghuang Lin and David Huang and Hanming Wu and Ru Huang and Kafei Lai and Ying Zhang and Beichao Zhang and Kuochun Wu and Larry Chen and Steve Liang and Peilin Song and Hsiang-Lan Lung and Dong Chen and Qi Wang",
booktitle = "China Semiconductor Technology International Conference 2015, CSTIC 2015",
}