Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

Yi Chin Lin; Wei Chih Liu; Chia Lun Chang; Chao Chi Chung; Yan Hao Chen; Te Yuan Chung; Cheng Yi Liu

doi:10.1109/LPT.2014.2329857

Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

Yi Chin Lin, Wei Chih Liu, Chia Lun Chang, Chao Chi Chung, Yan Hao Chen, Te Yuan Chung, Cheng Yi Liu

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm². The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

原文	???core.languages.en_GB???
文章編號	6828707
頁（從 - 到）	1793-1796
頁數	4
期刊	IEEE Photonics Technology Letters
卷	26
發行號	18
DOIs	https://doi.org/10.1109/LPT.2014.2329857
出版狀態	已出版 - 15 9月 2014

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10.1109/LPT.2014.2329857

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abstract = "By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.",

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AU - Lin, Yi Chin

AU - Liu, Wei Chih

AU - Chang, Chia Lun

AU - Chung, Chao Chi

AU - Chen, Yan Hao

AU - Chung, Te Yuan

AU - Liu, Cheng Yi

PY - 2014/9/15

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N2 - By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

AB - By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

KW - GaN light-emitting diode (LED)

KW - internal quantum efficiency

KW - piezoelectric field

KW - stress

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Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

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