Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

Yi Chin Lin, Wei Chih Liu, Chia Lun Chang, Chao Chi Chung, Yan Hao Chen, Te Yuan Chung, Cheng Yi Liu

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

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文章編號6828707
頁(從 - 到)1793-1796
頁數4
期刊IEEE Photonics Technology Letters
26
發行號18
DOIs
出版狀態已出版 - 15 9月 2014

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