Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Y. H. Lin, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi, J. Kwo, M. Hong

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.

原文???core.languages.en_GB???
頁(從 - 到)164-168
頁數5
期刊Journal of Crystal Growth
477
DOIs
出版狀態已出版 - 1 11月 2017

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