Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Y. H. Lin; K. Y. Lin; W. J. Hsueh; L. B. Young; T. W. Chang; J. I. Chyi; T. W. Pi; J. Kwo; M. Hong

doi:10.1016/j.jcrysgro.2017.02.038

Interfacial characteristics of Y₂O₃/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Y. H. Lin, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi, J. Kwo, M. Hong

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

High quality Y₂O₃ on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y₂O₃/GaSb and non-stoichiometric Sb₂Ox (x<4) was found in the ALD-Y₂O₃/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y₂O₃ provides lower interfacial trap density (D_it) grown at elevated temperature of 200°C, while ALD-grown Y₂O₃ shows smaller hysteresis and higher dielectric constant.

原文	???core.languages.en_GB???
頁（從 - 到）	164-168
頁數	5
期刊	Journal of Crystal Growth
卷	477
DOIs	https://doi.org/10.1016/j.jcrysgro.2017.02.038
出版狀態	已出版 - 1 11月 2017

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10.1016/j.jcrysgro.2017.02.038

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title = "Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition",

abstract = "High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.",

keywords = "A3. Atomic layer deposition, A3. Molecular beam epitaxy, B1. Antimonides, B2. Sb-based semiconductors",

author = "Lin, {Y. H.} and Lin, {K. Y.} and Hsueh, {W. J.} and Young, {L. B.} and Chang, {T. W.} and Chyi, {J. I.} and Pi, {T. W.} and J. Kwo and M. Hong",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

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doi = "10.1016/j.jcrysgro.2017.02.038",

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TY - JOUR

T1 - Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

AU - Lin, Y. H.

AU - Lin, K. Y.

AU - Hsueh, W. J.

AU - Young, L. B.

AU - Chang, T. W.

AU - Chyi, J. I.

AU - Pi, T. W.

AU - Kwo, J.

AU - Hong, M.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.

AB - High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.

KW - A3. Atomic layer deposition

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B2. Sb-based semiconductors

UR - http://www.scopus.com/inward/record.url?scp=85014257810&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2017.02.038

DO - 10.1016/j.jcrysgro.2017.02.038

M3 - 期刊論文

AN - SCOPUS:85014257810

SN - 0022-0248

VL - 477

SP - 164

EP - 168

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

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Interfacial characteristics of Y₂O₃/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition