Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells

Chang Cheng Chuo, Chia Ming Lee, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

86 引文 斯高帕斯(Scopus)

摘要

Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.

原文???core.languages.en_GB???
頁(從 - 到)314-316
頁數3
期刊Applied Physics Letters
78
發行號3
DOIs
出版狀態已出版 - 15 1月 2001

指紋

深入研究「Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells」主題。共同形成了獨特的指紋。

引用此