摘要
Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 314-316 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 78 |
發行號 | 3 |
DOIs | |
出版狀態 | 已出版 - 15 1月 2001 |