@inproceedings{200b3d5a99c344b9815b95b4faef7db4,
title = "Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity",
abstract = "SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers have been demonstrated to have high responsivity, GHz bandwidth and infrared (1.3 and 1.55 nm) detection ability, and can be used for gigabit optical communication applications [1]. To facilitate the integration with the following amplification circuitry, the SiGe/Si MQW absorption layers can be removed for the 850 nm wavelength detection. Moreover, the speed and avalanche responsivity are further enhanced by proper design of the non-ideal (nkT) base current, with a reasonable normal responsivity. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.",
author = "Z. Pei and Shi, {J. W.} and Hsu, {Y. M.} and F. Yuan and Liang, {C. S.} and Liu, {C. W.} and Pan, {T. M.} and Lu, {S. C.} and Hsieh, {W. Y.} and Tsai, {M. J.}",
year = "2003",
doi = "10.1109/ISDRS.2003.1271975",
language = "???core.languages.en_GB???",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "18--19",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}