In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

Chia Song Wu; Yi Jen Chan; Tien Huat Gan; Jia Lin Shieh; Jen Inn Chyi

In_0.52(Al_0.9Ga_0.1)_0.48As/In_0.53Ga_0.47As HEMTs on InP substrates

Chia Song Wu, Yi Jen Chan, Tien Huat Gan, Jia Lin Shieh, Jen Inn Chyi

電機工程學系

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

原文	???core.languages.en_GB???
頁（從 - 到）	412-415
頁數	4
期刊	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態	已出版 - 1995
事件	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn 持續時間: 9 5月 1995 → 13 5月 1995

引用此

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title = "In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates",

abstract = "InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.",

author = "Wu, {Chia Song} and Chan, {Yi Jen} and Gan, {Tien Huat} and Shieh, {Jia Lin} and Chyi, {Jen Inn}",

year = "1995",

language = "???core.languages.en_GB???",

pages = "412--415",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials ; Conference date: 09-05-1995 Through 13-05-1995",

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TY - JOUR

T1 - In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

AU - Wu, Chia Song

AU - Chan, Yi Jen

AU - Gan, Tien Huat

AU - Shieh, Jia Lin

AU - Chyi, Jen Inn

PY - 1995

Y1 - 1995

N2 - InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

AB - InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=0029234696&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0029234696

SN - 1092-8669

SP - 412

EP - 415

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials

Y2 - 9 May 1995 through 13 May 1995

ER -

In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

摘要

指紋

引用此

In_0.52(Al_0.9Ga_0.1)_0.48As/In_0.53Ga_0.47As HEMTs on InP substrates