In_0.52Al_0.48 As Based Single Photon Avalanche Diodes with Stepped E-Field in Multiplication Layers and High Efficiency beyond 60%

Keyphrases

• High Efficiency 100%
• Electric Field (E-field) 100%
• Timing Jitter 100%
• Single Photon Avalanche Diode 100%
• Afterpulsing 100%
• Single Photon Detection Efficiency 100%
• Detection Efficiency 50%
• Mesostructure 50%
• Detection Performance 50%
• Electric Field Distribution 50%
• Device Structure 50%
• Temporal Features 50%
• Gate Width 50%
• Dark Count Rate 50%
• Gated Mode 50%
• Single-photon Detector 50%

Engineering

• Field Distribution 100%
• Detection Performance 100%
• Device Structure 100%
• Gate Width 100%
• Electric Field 100%

Computer Science

• Detection Performance 100%
• Temporal Characteristic 100%
• Field Distribution 100%