In0.52Al0.48 As Based Single Photon Avalanche Diodes with Stepped E-Field in Multiplication Layers and High Efficiency beyond 60%

Yi Shan Lee, Yan Min Liao, Ping Li Wu, Chi En Chen, Yu Jie Teng, Yu Ying Hung, Jin Wei Shi

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

We carry out an In0.53Ga0.47As/In0.52Al0.48As single photon avalanche diode which exhibits a single photon detection efficiency exceeding 60% at 1310 nm and neat temporal characteristic of 65 ps. A novel concept of dual multiplication layer is incorporated to avoid the tradeoff between dark count rate, afterpulsing and timing jitter, paving the possibility to improve the overall performance of a single photon detector. Based on this elevated device structure, we further optimize the detection efficiency and timing jitter by employing a delicate mesa structure to better confine the electric field distribution within the central multiplication region. For our detector operated under gated mode, a shorten gate width together with an increase of excess bias percentage leads to a significant improvement in the detection performance. We eventually achieve a single photon detection efficiency of 61.4% without the involvement of afterpulsing at the gating frequency of 10 kHz for 200 K.

原文???core.languages.en_GB???
期刊IEEE Journal on Selected Topics in Quantum Electronics
28
發行號2
DOIs
出版狀態已出版 - 2022

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