In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Yi Jen Chan; Ming Ta Yang; Chia Song Wu; Jen Inn Chyi

doi:10.1109/EDMS.1994.771266

In_0.29al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Yi Jen Chan, Ming Ta Yang, Chia Song Wu, Jen Inn Chyi

電機工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

The unstrained or the so-called metamorphic In_0.29AI_0.71As/In_0.3Ga_0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (g_m) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (f_T) of 23 GHz and a maximum available gain cut-off frequency (f_max) of 73 GHz. Based on the DCFETs, a g_m of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of f_T=22 GHz and f_max=51 GHz have been obtained.

原文	???core.languages.en_GB???
DOIs	https://doi.org/10.1109/EDMS.1994.771266
出版狀態	已出版 - 1994
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 12 7月 1994 → 15 7月 1994

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???event.eventtypes.event.conference???	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	Taiwan
城市	Hsinchu
期間	12/07/94 → 15/07/94

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10.1109/EDMS.1994.771266

引用此

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title = "In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates",

abstract = "The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.",

author = "Chan, {Yi Jen} and Yang, {Ming Ta} and Wu, {Chia Song} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; null ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771266",

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T1 - In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

AU - Chan, Yi Jen

AU - Yang, Ming Ta

AU - Wu, Chia Song

AU - Chyi, Jen Inn

PY - 1994

Y1 - 1994

N2 - The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.

AB - The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.

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U2 - 10.1109/EDMS.1994.771266

DO - 10.1109/EDMS.1994.771266

M3 - 會議論文

AN - SCOPUS:85063570272

Y2 - 12 July 1994 through 15 July 1994

ER -

In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

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In_0.29al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates