TY - JOUR
T1 - InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths
AU - Shi, J. W.
AU - Hung, T. J.
AU - Chen, Y. Y.
AU - Wu, Y. S.
AU - Lin, Wei
AU - Yang, Ying Jay
N1 - Funding Information:
Manuscript received May 9, 2006; revised July 14, 2006. This work was supported by the National Science Council of Taiwan under Grant NSC-94-2215-E-008-008-and by the Department of Industrial Technology, the Ministry of Economic Affairs, under Grant 93-EC-17-A-07-S1-0001. J.-W. Shi, T.-J. Hung, Y.-Y. Chen, and Y.-S. Wu are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). W. Lin is with the Land Mark Optoelectronics Corporation, Tainan 710, Taiwan, R.O.C. Y.-J. Yang is with the Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2006.883296
PY - 2006/10/1
Y1 - 2006/10/1
N2 - We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs which have different center wavelengths. The wide optical 3-dB bandwidth achieved (∼550 nm) is very stable and varies only negligibly with the bias current. For a bias current of 60 mA, a tremendously wide 3-dB optical bandwidth (580 nm, 1042 ∼ 1622 nm) has been demonstrated.
AB - We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs which have different center wavelengths. The wide optical 3-dB bandwidth achieved (∼550 nm) is very stable and varies only negligibly with the bias current. For a bias current of 60 mA, a tremendously wide 3-dB optical bandwidth (580 nm, 1042 ∼ 1622 nm) has been demonstrated.
KW - Light-emitting diodes (LEDs)
KW - Semiconductor optical amplifiers (SOAs)
UR - http://www.scopus.com/inward/record.url?scp=33845805945&partnerID=8YFLogxK
U2 - 10.1109/LPT.2006.883296
DO - 10.1109/LPT.2006.883296
M3 - 期刊論文
AN - SCOPUS:33845805945
SN - 1041-1135
VL - 18
SP - 2053
EP - 2055
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 19
ER -