InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

Han Chieh Ho, Zong Yan Gao, Heng Kuang Lin, Pei Chin Chiu, Yue Ming Hsin, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

摘要

This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.

原文???core.languages.en_GB???
頁(從 - 到)499-500
頁數2
期刊Electronics Letters
49
發行號7
DOIs
出版狀態已出版 - 28 3月 2013

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