摘要
This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 499-500 |
頁數 | 2 |
期刊 | Electronics Letters |
卷 | 49 |
發行號 | 7 |
DOIs | |
出版狀態 | 已出版 - 28 3月 2013 |