@article{3d0e81b87d464b3fab582bd06cf78671,
title = "InGaN-GaN MQW LEDs with current blocking layer formed by selective activation",
abstract = "Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.",
keywords = "Current blocking layer, GaN, Light-emitting diodes (LEDs), Selective activation",
author = "Lee, {Chia Ming} and Chuo, {Chang Cheng} and Liu, {Yu Chuan} and Chen, {I. Ling} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received February 23, 2004. This work was supported in part by Tekcore Company, Ltd. and the National Science Council of Taiwan, R.O.C. under Contract NSC91-2215-E-008-014, and in part by the Program for Promoting Academic Excellence of Universities, Ministry of Education of Taiwan, R.O.C. under Contract 91-E-FA06-1-4. The review of this letter was arranged by Editor P. Yu. C.-M. Lee, Y.-C. Liu, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Chung-Li 32054, Taiwan, R.O.C. C.-C. Chuo is with the Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu 300, Taiwan, R.O.C. I.-L. Chen is with the Tekcore Company, Ltd., Nantou 540, Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2004.829666 Funding Information: The authors would like to acknowledge the support of the Optical Sciences Center, National Central University.",
year = "2004",
month = jun,
doi = "10.1109/LED.2004.829666",
language = "???core.languages.en_GB???",
volume = "25",
pages = "384--386",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "6",
}