InGaN-GaN MQW LEDs with current blocking layer formed by selective activation

Chia Ming Lee, Chang Cheng Chuo, Yu Chuan Liu, I. Ling Chen, Jen Inn Chyi

研究成果: 雜誌貢獻通訊期刊論文同行評審

16 引文 斯高帕斯(Scopus)

摘要

Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.

原文???core.languages.en_GB???
頁(從 - 到)384-386
頁數3
期刊IEEE Electron Device Letters
25
發行號6
DOIs
出版狀態已出版 - 6月 2004

指紋

深入研究「InGaN-GaN MQW LEDs with current blocking layer formed by selective activation」主題。共同形成了獨特的指紋。

引用此